[USD 5.17] HY4504W Cover TO-247 40V250A 24mΩ MOS Field Effect Tube MOS Tube Hua Yi Microelectric - Wholesale from China online shopping | Buy asian products online from the best shoping agent - ChinaHao.com

JavaScript seems to be disabled in your browser.
You must have JavaScript enabled in your browser to utilize the functionality of this website.

Home/
Electronic components/
Electronic devices/
MOS field effect transistor/
HY4504W Cover TO-247 40V250A 24mΩ MOS Field Effect Tube MOS Tube Hua Yi Microelectric

Additional

model	HY4504W
packaging	TO-247
Leakage voltage (Vdss)	40
Leakage current (Id)	250
Leakage conductivity resistance	twenty four

Details

Wholesale

You may also like

HY4504B TO-263 40V250A MOS transistor Huawei Microelectric can replace SUM110N04-2m1P
USD 4.99
HY3306P TO-220 60V130A can replace IRF3205Z IRFB7545 Huawei WeiDian
USD 4.55
HY4306B TO-263 60V230A can replace IRLS3036 IRFS3006 IRFS3206
USD 5.05
HY1808P TO-220 75V85A MOS field effector can replace FDP060AN08AO
USD 4.37
HY3208AP package TO-220 80V120 Huaqiu microelectric MOS transistor batch details
USD 4.34
HY1906P TO-220 60V120A replaces IRL3705Z IRF1010Z IRF3205
USD 4.37
HY3704 package TO-220 40V176A can replace SUP90N04-3m3P Huaqiu WeiDian
USD 4.81
HY3906B package TO-263 60V190A can replace IRFS3306N channel Huaqiu microelectric
USD 4.64
HY4004B HY4004 TO-263 40V208A can replace IRF2204S FDB8443
USD 4.67
HY3810B TO-263 100V180A can replace IRFS4010 FDB047N10 FDB86135
USD 5.11
HY3712B new HY3712TO-263 125V170A can replace IRF135S203 Huaqiu Microelectric
USD 5.02
HY3410B package TO-263 100V140A N channel can replace IRFS4310 Huaqiu WeiDian
USD 4.75
HY3007B package TO-263 70V120A new IN stock can replace IRF3808S Huaqiu WeiDian
USD 4.37
HY3210B TO-263 100V120A can replace SUM110N10-09 IRFS4310Z
USD 4.58
HY1710B TO-263 100V70A can replace SUM60N10-17 IRF3710ZS FQB55N10
USD 4.40