Top

HY5012W package TO-247 125V300A 36mΩ Huaqiao microelectric MOS transistor Huaqiao microelectric

HY5012W package TO-247 125V300A 36mΩ Huaqiao microelectric MOS transistor Huaqiao microelectricZoom

Additional

modelHY5012W
packageTO-247
Leakage source voltage (Vdss)125
Drain current (Id)300
Leakage source conduction resistance36

Details

Wholesale

Please contact our support team at service@chinahao.com

HY5012W package TO-247 125V300A 36mΩ Huaqiao microelectric MOS transistor Huaqiao microelectric

HY5012W package TO-247 125V300A 36mΩ Huaqiao microelectric MOS transistor Huaqiao microelectricHY5012W package TO-247 125V300A 36mΩ Huaqiao microelectric MOS transistor Huaqiao microelectricProvide HY5012W package TO-247 125V300A 36mΩ Huaqiao microelectric MOS transistor Huaqiao microelectric by 铂嘉半导体有限公司铂嘉半导体有限公司 at chinahao.com. Product #: 5285842329176.23铂嘉半导体有限公司In stock